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R5975D датащи(PDF) 28 Page - STMicroelectronics |
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R5975D датащи(HTML) 28 Page - STMicroelectronics |
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28 / 47 page ![]() Application information R5975D 28/47 DocID026878 Rev 1 The dissipated power of the device is tied to three different sources: Conduction losses due to the not insignificant RDS(on), which are equal to: Equation 23 where D is the duty cycle of the application. Note that the duty cycle is theoretically given by the ratio between VOUT and VIN, but in practice it is substantially higher than this value to compensate for the losses in the overall application. For this reason, the switching losses related to the RDS(on) increase compared to an ideal case. Switching losses due to turning on and off. These are derived using the following equation: Equation 24 where TRISE and TFALL represent the switching times of the power element that cause the switching losses when driving an inductive load (see Figure 14). TSW is the equivalent switching time. Figure 14. Switching losses Quiescent current losses. Equation 25 where IQ is the quiescent current. PON RDS on IOUT 2 D = PSW VIN IOUT TON TOFF + 2 ------------------------------------ FSW VIN = IOUT TSW FSW = PQ VIN IQ = |
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