BSP76 datasheet(1/10 Pages) INFINEON

номер детали	BSP76

подробное описание детали	Smart Lowside Power Switch

PDF	10 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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1 / 10 page

2004-03-05

Page 1

HITFETÒ II.Generation BSP 76

Smart Lowside Power Switch

Product Summary

Drain source voltage

VDS

42

V

On-state resistance

RDS(on) 200

m

W

Nominal load current

ID(Nom)

1.4

A

Clamping energy

EAS

150

mJ

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown with

auto restart

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

VPS05163

1

2

3

4

Application

· All kinds of resistive, inductive and capacitive loads in switching

or linear applications

· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded

protection functions.

Gate-Driving

Unit

ESD

Overload

Protection

Over-

temperature

Protection

Short circuit

Protection

Overvoltage-

Protection

Current

Limitation

M

Vbb

In

Source

Drain

HITFET â

Pin 1

Pin 2 and 4 (TAB)

Pin 3

Complete product spectrum and additional information http://www.infineon.com/hitfet

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Infineon Technologies A...	BSP762	358Kb / 16P	Smart Power High-Side-Switch 2004-01-27
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Siemens Semiconductor G...	OBTS141	138Kb / 10P	Smart Lowside Power Switch
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BSP76 датащи(PDF) 1 Page - Infineon Technologies AG

BSP76 датащи(HTML) 1 Page - Infineon Technologies AG

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