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DF2B6M4SL датащи(PDF) 2 Page - Toshiba Semiconductor |
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DF2B6M4SL датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 8 page ![]() DF2B6M4SL 2015-09-29 2 Characteristic Symbol Test Condition Min Typ. Max Unit Reverse stand-off voltage VRWM ― ― ― 5.5 V Reverse breakdown voltage VBR IBR = 1 mA 5.6 6.2 8 V Reverse current IR VRWM = 5.5 V ― ― 0.1 A Clamping Voltage Vc IPP=1A (Note1) ― 8.5 ― V Vc IPP=2A (Note1) ― 10 15 V Clamping Voltage Vc ITLP=16A (Note2) ― 18 ― V Vc ITLP=30A (Note2) ― 25 ― V Dynamic resistance RDYN (Note2) ― 0.5 ― Ω Total capacitance Ct VR 0 V, f 1 MHz (Note3) ― 0.2 0.3 pF Note1:Based on IEC61000-4-5 8/20μs pulse. Note2:TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8A and IPP2 = 16A. Note3:Guaranteed by design. Equivalent Circuit (Top View) Marking Land Pattern Dimensions for Reference Only(Unit:mm) Pin1 Mark 1 2 |
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