DF2B6M4SL

2015-09-29

1

TOSHIBA Diodes for Protecting against ESD

DF2B6M4SL

Application

-

ESD Protection

Note: This product is designed for protection against electrostatic discharge

(ESD) and is not intended for any other purpose, including, but not limited to,

voltage regulation.

Characteristic

Symbol

Rating

Unit

Electrostatic discharge voltage

IEC61000-4-2(Contact)

IEC61000-4-2(Air)

(Note 1)

± 23

± 25

kV

Peak pulse power ( tp = 8 / 20 s )

30

W

Maximum peak pulse current ( tp = 8 / 20 s )

(Note 2)

2

A

Junction temperature

150

C

Storage temperature range

−55 to 150

C

Note1 : according to IEC61000-4-2

Note2 : according to IEC61000-4-5

Note3:Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/ “Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

JEDEC

―



JEITA

―

TOSHIBA

―

Weight: 0.2 mg (typ.)

SL2

1:Pin1

2:Pin2