BFP520 datasheet(2/8 Pages) INFINEON

номер детали	BFP520

подробное описание детали	NPN Silicon RF Transistor

PDF	8 Pages

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производитель	INFINEON [Infineon Technologies AG]

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BFP520

SIEGET45

Sep-26-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 2.5

3.5

Collector-base cutoff current

VCB = 5 V, IE = 0

ICBO

200

Emitter-base cutoff current

VEB = 1 V, IC = 0

IEBO

µA

DC current gain

IC = 20 mA, VCE = 2 V

hFE

110

200

AC characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 2 V, f = 2 GHz

GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz

Ccb

0.06

Collector-emitter capacitance

VCE = 2 V, f = 1 MHz

Cce

0.3

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.35

Noise figure

IC = 2 mA, VCE = 2 V, ZS = ZSopt ,

f = 1.8 GHz

0.95

Power gain, maximum stable 1)

IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Gms

Insertion power gain

IC = 20 mA, VCE = 2 V, f = 1.8 GHz,

ZS = ZL = 50

|S21|2

Third order intercept point at output

VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt ,

IC = 20 mA

IC = 7 mA

IP3

dBm

1dB compression point

VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt ,

IC = 20 mA

IC = 7 mA

P-1dB

1Gms = |S21 / S12|

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