BFP520 datasheet(1/8 Pages) INFINEON

номер детали	BFP520

подробное описание детали	NPN Silicon RF Transistor

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BFP520

SIEGET45

Sep-26-2001

1

NPN Silicon RF Transistor

For highest gain low noise amplifier

at 1.8 GHz and 2 mA / 2 V

Outstanding Gms = 23 dB

Noise Figure F = 0.95 dB

For oscillators up to 15 GHz

Transition frequency fT = 45 GHz

Gold metallization for high reliability

SIEGET 45 - Line

45 GHz fT - Line

VPS05605

4

2

1

3

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP520

APs

1 = B

2 = E

3 = C

4 = E

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

2.5

V

Collector-base voltage

VCBO

10

Emitter-base voltage

VEBO

1

Collector current

IC

40

mA

Base current

IB

4

Total power dissipation

TS 105 °C 1)

Ptot

100

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

450

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

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