CDCLVC1310_14 datasheet(7/30 Pages) TI1

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CDCLVC1310

www.ti.com

SCAS917E – JULY 2011 – REVISED JANUARY 2014

CRYSTAL CHARACTERISTICS

over recommended ranges of supply voltage, load and ambient temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Equivalent series resistance (ESR)

Maximum shunt capacitance

Drive level

100

µW

CRYSTAL OSCILLATOR CHARACTERISTICS

over recommended ranges of supply voltage, load and ambient temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Mode of oscillation

Fundamental

Frequency

MHz

Frequency in overdrive mode(1)

MHz

Frequency in bypass mode(2)

MHz

On-chip load capacitance

(1)

Input signal swing (max) = 2 V; input signal tr (max) = 10 ns; tf(max) = 10 ns; functional, but device may not meed ac parameters.

(2)

Input signal swing (max) = VDD; input signal tr (max) = 10 ns; tf(max) = 10 ns; functional, but device may not meed ac parameters.

LVCMOS OUTPUT CHARACTERISTICS

over recommended ranges of supply voltage (VDDO

≤ VDD), load (50 Ω to VDDO/2), and ambient temperature (unless

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

fOUT

200

MHz

0.8 *

VDDO = 3.135 V to 3.465 V

VDDO

0.8 *

VDDO = 2.375 V to 2.625 V

VDDO

VOH

Output high voltage

0.7 *

VDDO = 1.6 V to 2 V

VDDO

0.7 *

VDDO = 1.35 V to 1.65 V

VDDO

0.2 *

VDDO = 3.135 V to 3.465 V

VDDO

0.2 *

VDDO = 2.375 V to 2.625 V

VDDO

VOL

Output low voltage

0.3 *

VDDO = 1.6 V to 2 V

VDDO

0.3 *

VDDO = 1.35 V to 1.65 V

VDDO

VDDO = 3.3 V

VDDO = 2.5 V

ROUT

Output impedance

VDDO = 1.8 V

VDDO = 1.5 V

VDDO=3.3V +/- 5%, 20% to 80%

5.6

7.3

9.0

VDDO=2.5V +/- 5%, 20% to 80%

3.9

4.8

5.4

tSLEW-RATE

Output slew rate, rising and falling

V/ns

VDDO=1.8V +/- 200mV, 20% to 80%

1.6

2.1

2.5

VDDO=1.5V +/- 150mV, 20% to 80%

0.9

1.2

1.4

tSK

Output skew

tSK,PP

Part-to-part skew(1)

(1)

Calculation for part-to-part skew is the difference between the fastest and the slowest tpd across multiple devices.

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