AL9901FDF-13 datasheet(5/20 Pages) DIODES

5 / 20 page

AL9901

Document number: DS37713 Rev. 1 - 2

5 of 20

www.diodes.com

March 2015

AL9901

Internal MOSFET Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

650

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 650V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±30V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(th)

—

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)

—

VGS = 10V, ID = 1A

Diode Forward Voltage

VSD

—

0.7

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

479

—

VDS = 25V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

1.9

—

Gate Resistance

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

—

VDS = 520V, VGS = 10V,

ID = 2A

Gate-Source Charge

Qgs

—

2.5

—

Gate-Drain Charge

Qgd

—

7.3

—

Turn-On Delay Time

tD(on)

—

VDS = 325V, VGS = 10V,

RG = 25 , ID = 2.5A

Turn-On Rise Time

—

Turn-Off Delay Time

tD(off)

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

trr

—

174

—

VDS = 100V, IF = 2A,

di/dt = 100A/µs

Body Diode Reverse Recovery Charge

Qrr

—

884

—

Notes:

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

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