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DMNH3010LK3 датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMNH3010LK3
подробное описание детали  175C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH3010LK3 датащи(HTML) 4 Page - Diodes Incorporated

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DMNH3010LK3
Document number: DS38455 Rev. 2 - 2
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMNH3010LK3
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 4.5V, ID = 16A
V
GS = 10V, ID = 18A
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8
. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS = 0V
T
A = -55
oC
T
A = 25
oC
T
A = 85
oC
T
A = 175
oC
T
A = 150
oC
T
A = 125
oC
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 10. Gate Charge
V
DS = 15V, ID = 18A
10
100
1000
10000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0.1
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)=175℃
T
C=25℃
Single Pulse
DUT on infinite heatsink
V
GS=10V
R
DS(ON) Limited
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms
P
W=100μs
P
W=10μs



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