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DMNH3010LK3 датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMNH3010LK3
подробное описание детали  175C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH3010LK3 датащи(HTML) 3 Page - Diodes Incorporated

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DMNH3010LK3
Document number: DS38455 Rev. 2 - 2
3 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMNH3010LK3
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 3.0V
V
GS = 3.5V
V
GS = 4.0V
V
GS = 4.5V
V
GS = 5.0V
V
GS = 10V
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0.011
0.012
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 4.5V
V
GS = 10.0V
0
0.01
0.02
0.03
0.04
0.05
0
2
4
6
8
10
12
14
16
18
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 18A
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
V
GS= 10V
T
A=-55℃
T
A=25℃
T
A=85℃
T
A=125℃
T
A=150℃
T
A=175℃
0
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with
Temperature
V
GS = 10V, ID = 18A
V
GS = 4.5V, ID = 16A
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS= 5V
T
A=-55℃
T
A=25℃
T
A=85℃
T
A=125℃
T
A=150℃
T
A=175℃



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