DMTH4007SPD

Document number: DS37359 Rev. 3 - 2

4 of 7

www.diodes.com

November 2015

© Diodes Incorporated

DMTH4007SPD

0

0.005

0.01

0.015

0.02

-50

-25

0

25

50

75

100

125 150 175

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

V

= 10V

GS

I = 15A

D

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J



0.5

1

1.5

2

2.5

3

3.5

4

-50

-25

0

25

50

75

100 125 150 175

I = 1mA

D

I = 250µA

D

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = -55 C

A



T = 25 C

A



T = 85 C

A



T = 175 C

A



T = 150 C

A



T = 125 C

A



V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

C

oss

10

100

1000

10000

0

5

10

15

20

25

30

35

40

f = 1MHz

Q

(nC)

Figure 11 Gate Charge

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

45

V

= 30V

I =

A

DS

D

20

0.1

1

10

100

0.1

1

10

100

Limited

T

= 175°C

J (m ax )

T

= 25°C

C

V

= 10V

GS

Single Pulse

DUT on 1 * MRP Board

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

P

= 10µs

W

P

= 1µs

W

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area