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DMTH4007SPD датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMTH4007SPD
подробное описание детали  40V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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DMTH4007SPD датащи(HTML) 2 Page - Diodes Incorporated

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DMTH4007SPD
Document number: DS37359 Rev. 3 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMTH4007SPD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6)
TC = +25°C
(Note 9)
TC = +100°C
ID
45
A
38.1
Continuous Drain Current (Note 5)
TA = +25°C
TA = +70°C
ID
14.2
11.9
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
90
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
34
A
Avalanche Current, L = 0.1mH
IAS
20
A
Avalanche Energy, L = 0.1mH
EAS
89
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
2.6
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
57
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
37.5
W
Thermal Resistance, Junction to Case (Note 6)
RθJC
4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
40
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 32V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
2
4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
7.5
8.6
m
Ω
VGS = 10V, ID = 17A
Diode Forward Voltage
VSD
0.85
V
VGS = 0V, IS = 17A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
2,026
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
702
pF
Reverse Transfer Capacitance
Crss
84.8
pF
Gate Resistance
Rg
0.46
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
41.9
nC
VDS = 30V, ID = 20A, VGS = 10V
Gate-Source Charge
Qgs
10
nC
Gate-Drain Charge
Qgd
11.5
nC
Turn-On Delay Time
tD(on)
7
ns
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
Turn-On Rise Time
tr
11.5
ns
Turn-Off Delay Time
tD(off)
15.6
ns
Turn-Off Fall Time
tf
8.8
ns
Body Diode Reverse Recovery Time
trr
29.9
nS
IF = 20A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
23
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.



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