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DMN6040SVTQ датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMN6040SVTQ
подробное описание детали  60V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN6040SVTQ датащи(HTML) 4 Page - Diodes Incorporated

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DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
4 of 8
www.diodes.com
December 2015
© Diodes Incorporated
DMN6040SVTQ
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


100
nA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
1
3
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
30
44
m
Ω
VGS = 10V, ID = 4.3A
35
60
VGS = 4.5V, ID = 4A
Forward Transfer Admittance
|YFS|
4.5
S
VDS = 10V, ID = 4.3A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
CISS
1,287
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
COSS
57
Reverse Transfer Capacitance
CRSS
44
Gate Resistance
RG

1.2

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V)
QG
22.4
nC
VDS = 30V, ID = 4.3A
Total Gate Charge (VGS = 4.5V)
QG

10.4

Gate-Source Charge
QGS
4.9
Gate-Drain Charge
QGD
3.0
Turn-On Delay Time
tD(ON)
6.6
ns
VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
Turn-On Rise Time
tR
8.1
Turn-Off Delay Time
tD(OFF)
20.1
Turn-Off Fall Time
tF

4.0

Body Diode Reverse Recovery Time
tRR

18

ns
IS = 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR

11.9

nC
IS = 4.3A, dI/dt = 100A/μs
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.



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