DMN6040SVTQ datasheet(2/8 Pages) DIODES

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DMN6040SVTQ

Document number: DS38508 Rev. 1 - 2

2 of 8

www.diodes.com

December 2015

DMN6040SVTQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

5.0

4.0

t<10s

TA = +25°C

TA = +70°C

6.3

5.0

Continuous Drain Current (Note 7) VGS = 5V

Steady

State

TA = +25°C

TA = +70°C

4.3

3.4

t<10s

TA = +25°C

TA = +70°C

5.4

4.3

Maximum Body Diode Forward Current (Note 7)

2.1

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

Avalanche Current (Note 8) L = 0.1mH

IAR

14.2

Avalanche Energy (Note 8) L = 0.1mH

EAR

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

TA = +25°C

1.2

TA = +70°C

0.75

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

106

°C/W

t<10s

°C/W

Total Power Dissipation (Note 7)

TA = +25°C

1.8

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RθJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 7)

RθJC

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

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