NVJS4151P datasheet(1/5 Pages) ONSEMI

номер детали	NVJS4151P

подробное описание детали	Single P?묬hannel Trench Power MOSFET

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производитель	ONSEMI [ON Semiconductor]

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August, 2014 − Rev. 1

1

Publication Order Number:

NVJS4151P/D

NVJS4151P

Trench Power MOSFET

−20 V, −4.1 A, Single P−Channel, SC−88

Features

• Leading Trench Technology for Low RDS(ON) Extending Battery Life

• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board

Utilization, Same as SC−70−6

• Gate Diodes for ESD Protection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25 °C

ID

−3.2

A

TA = 85 °C

−2.3

t ≤ 5 s

TA = 25 °C

−4.1

Power Dissipation

(Note 1)

Steady

State

TA = 25 °C

PD

1.2

W

Pulsed Drain Current

tp = 10 ms

IDM

−13

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode)

IS

−0.8

A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

ESD

Human Body Model (HBM)

ESD

4000

V

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State

RqJA

125

°C/W

Junction−to−Ambient − t ≤ 5 s

RqJA

75

Junction−to−Lead – Steady State

RqJL

45

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Device

Package

Shipping†

ORDERING INFORMATION

Top View

http://onsemi.com

SC−88 (SOT−363)

D

S

D

6

5

4

1

2

3

V(BR)DSS

RDS(on) Typ

ID Max

55 mW @ −4.5 V

70 mW @ −2.5 V

180 mW @ −1.8 V

−4.1 A

NVJS4151PT1G

SC−88

(Pb−Free)

3000 / Tape & Reel

G

−20 V

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC−88/SOT−363

CASE 419B

MARKING DIAGRAM &

PIN ASSIGNMENT

VTY M G

G

1

6

1

VTY

= Device Code

M

= Date Code

G

= Pb−Free Package

DD

S

DD

G

(Note: Microdot may be in either location)

Аналогичный номер детали - NVJS4151P

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Аналогичное описание - NVJS4151P

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