MTSF3N03HDR2 datasheet(4/12 Pages) ONSEMI

номер детали	MTSF3N03HDR2

подробное описание детали	Power MOSFET

PDF	12 Pages

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производитель	ONSEMI [ON Semiconductor]

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MTSF3N03HD

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TYPICAL ELECTRICAL CHARACTERISTICS

0.5

1.5

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 3. On–Region Characteristics

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 4. Transfer Characteristics

0.4

0.5

0.6

0.03

Figure 5. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 6. On–Resistance versus Drain Current

and Gate Voltage

100

Figure 7. On–Resistance Variation

with Temperature

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 8. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = -55°C

25°C

100°C

0.3

0.1

TJ = 25°C

2.5

3.5

0.2

0.06

2.3 V

0.04

0.05

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

10 V

VGS = 4.5

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

-50

100

150

0.5

1.0

1.5

2.0

VGS = 10 V

ID = 1.9 A

125

-25

VGS = 0 V

TJ = 125°C

100°C

2.1 V

2.5 V

2.7 V

2.9 V

3.1 V

4.5 V

VGS = 10 V

ID = 3.8 A

TJ = 25°C

3.3 V

1.5

0.035

0.045

0.055

1000

0.1

25°C

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