MTSF3N03HD

http://onsemi.com

2

Rating

Symbol

Max

Unit

Drain–to–Source Voltage

VDSS

30

V

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

30

V

Gate–to–Source Voltage – Continuous

VGS

± 20

V

1

″ SQ.

FR–4 or G–10 PCB

Figure 1 below

Steady State

Thermal Resistance – Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current – Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 1.)

RTHJA

PD

ID

ID

IDM

70

1.79

14.29

5.7

4.5

45

°C/W

Watts

mW/

°C

A

A

A

Minimum

FR–4 or G–10 PCB

Figure 2 below

Steady State

Thermal Resistance – Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current – Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 1.)

RTHJA

PD

ID

ID

IDM

160

0.78

6.25

3.8

3.0

30

°C/W

Watts

mW/

°C

A

A

A

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 W)

EAS

200

mJ

1. Repetitive rating; pulse width limited by maximum junction temperature.

Figure 1. 1

, Square FR–4 or G–10 PCB

Figure 2. Minimum FR–4 or G–10 PCB