MTSF3N03HD

http://onsemi.com

3

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0)

(Notes 2. & 4.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

–

–

27

–

–

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

–

–

–

–

1.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

–

–

100

nAdc

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(Note 4.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

–

1.5

4.5

–

–

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0)

(Note 4.)

(VGS = 10 Vdc, ID = 3.8 Adc)

(VGS = 4.5 Vdc, ID = 1.9 Adc)

RDS(on)

–

–

35

45

40

60

m

Ω

Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc)

gFS

2.0

–

–

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vd

V

0 Vd

Ciss

–

420

–

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

–

190

–

Transfer Capacitance

f = 1.0 MHz)

Crss

–

65

–

SWITCHING CHARACTERISTICS (Note 3.)

Turn–On Delay Time

td(on)

–

7.0

–

ns

Rise Time

(VDS = 15 Vdc, ID = 3.7 Adc,

tr

–

19

–

Turn–Off Delay Time

(VDS 15 Vdc, ID 3.7 Adc,

VGS = 10 Vdc, RG = 6 Ω) (Note 2.)

td(off)

–

32

–

Fall Time

tf

–

36

–

Turn–On Delay Time

td(on)

–

7.0

–

ns

Rise Time

(VDD = 15 Vdc, ID = 1.9 Adc,

tr

–

11

–

Turn–Off Delay Time

(VDD 15 Vdc, ID 1.9 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (Note 2.)

td(off)

–

29

–

Fall Time

tf

–

23

–

Gate Charge

QT

–

18.5

26

nC

(VDS = 24 Vdc, ID = 3.7 Adc,

Q1

–

1.4

–

(VDS 24 Vdc, ID 3.7 Adc,

VGS = 10 Vdc)

Q2

–

5.5

–

Q3

–

7.1

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 3.7 Adc, VGS = 0 Vdc) (Note 2.)

(IS = 3.7 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

–

–

0.82

0.7

1.0

–

Vdc

Reverse Recovery Time

(I

37Ad

V

0Vd

trr

–

28

–

ns

(IS = 3.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (Note 2.)

ta

–

14

–

dIS/dt = 100 A/µs) (Note 2.)

tb

–

14

–

Reverse Recovery Storage Charge

QRR

–

0.028

–

µC

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

4. Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA