© Semiconductor Components Industries, LLC, 2000

November, 2000 – Rev. 4

1

Publication Order Number:

MTSF3N03HD/D

MTSF3N03HD

Preferred Device

Power MOSFET

3 Amps, 30 Volts

N–Channel Micro8

t

These Power MOSFET devices are capable of withstanding high

energy in the avalanche and commutation modes and the drain–to–source

diode has a very low reverse recovery time. Micro8 devices are designed

for use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc–dc converters, and

power management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be used

for low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

PCMCIA cards

Life

1

8

Device

Package

Shipping

ORDERING INFORMATION

MTSF3N03HDR2

Micro8

4000 Tape & Reel

Micro8

CASE 846A

STYLE 1

http://onsemi.com

AA

MARKING

DIAGRAM

WW

WW

= Date Code

Source

1

2

3

4

8

7

6

5

Top View

Source

Source

Gate

Drain

Drain

Drain

Drain

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.

N–Channel

3 AMPERES

30 VOLTS

RDS(on) = 40 mW

D

S

G