MTP2955VG datasheet(3/7 Pages) ONSEMI

номер детали	MTP2955VG

подробное описание детали	Power MOSFET

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MTP2955V

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TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.10

0.20

0.30

0.050

0.075

0.200

0.250

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

−50

0.6

0.8

1.2

1.6

020

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

−25

100

125

150

TJ = 25°C

VDS ≥ 10 V

TJ = −55°C

25°C

100°C

TJ = 25°C

VGS = 0 V

VGS = 10 V

ID = 6 A

9 V

8 V

6 V

5 V

7 V

VGS = 10 V

TJ = 100°C

25°C

−55°C

0.05

0.15

0.25

0.100

0.225

0.125

1.0

1.4

TJ = 125°C

VGS = 10 V

15 V

175

0.35

0.40

0.175

918

0.150

0.4

0.2

1.8

2.0

100°C

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