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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MTP2955VG датащи(PDF) 2 Page - ON Semiconductor |
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MTP2955VG датащи(HTML) 2 Page - ON Semiconductor |
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2 / 7 page  MTP2955V http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Note 3) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 − − 58 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − − − 10 100 mAdc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Cpk ≥ 2.0) (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 − 2.8 5.0 4.0 − Vdc mV/°C Static Drain−to−Source On−Resistance (Cpk ≥ 1.5) (Note 3) (VGS = 10 Vdc, ID = 6.0 Adc) RDS(on) − 0.185 0.230 W Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 12 Adc) (VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C) VDS(on) − − − − 2.9 2.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) gFS 3.0 5.0 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 550 700 pF Output Capacitance Coss − 200 280 Reverse Transfer Capacitance Crss − 50 100 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 30 Vdc, ID = 12 Adc, VGS = 10 Vdc, RG = 9.1 W) td(on) − 15 30 ns Rise Time tr − 50 100 Turn−Off Delay Time td(off) − 24 50 Fall Time tf − 39 80 Gate Charge (VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc) QT − 19 30 nC Q1 − 4.0 − Q2 − 9.0 − Q3 − 7.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1) (IS = 12 Adc, VGS = 0 Vdc) (IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C) VSD − − 1.8 1.5 3.0 − Vdc Reverse Recovery Time (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr − 115 − ns ta − 90 − tb − 25 − Reverse Recovery Stored Charge QRR − 0.53 − mC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 7.5 − nH 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Cpk = Max limit − Typ 3 x SIGMA |
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