MTP1306 datasheet(3/8 Pages) ONSEMI

номер детали	MTP1306

подробное описание детали	N?묬hannel Power MOSFET

PDF	8 Pages

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производитель	ONSEMI [ON Semiconductor]

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MTP1306

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TYPICAL ELECTRICAL CHARACTERISTICS

0.25

0.75

1.25

1.5

2.0

125

150

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.001

0.003

0.005

0.007

0.004

0.005

0.006

0.007

0.008

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

−50

0.5

2.0

100

1000

10,000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

−25

100

125

150

TJ = 25°C

VDS ≥ 10 V

TJ = −55°C

TJ = 100°C

TJ = 25°C

100

0.5

1.0

1.75

VGS = 10 V

160

180

140

2.0

2.5

3.0

3.5

4.0

4.5

0.006

0.004

0.002

100

140

100

1.5

VGS = 10 V

ID = 38 A

1.0

5.0

TJ = 125°C

100

°C

0.008

0.009

0.010

0.009

5.0 V

4.0 V

120

100

125

°C

120

°C

−55

°C

150

120

140

130

110

VGS = 5.0 V

10 V

VGS ≥ 10 V

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