MTP1306 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MTP1306

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V(BR)DSS

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

100

µAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

1.5

2.0

Vdc

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 38 Adc)

(VGS = 5.0 Vdc, ID = 38 Adc)

RDS(on)

−

5.8

7.4

6.5

8.5

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 75 Adc)

(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)

VDS(on)

−

0.44

−

0.5

0.38

Vdc

Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)

gFS

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

25 Vd

0Vd

Ciss

−

2560

3584

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

1305

1827

Transfer Capacitance

f = 1.0 MHz)

Crss

−

386

772

SWITCHING CHARACTERISTICS (Note 2.)

Turn−On Delay Time

td(on)

−

Rise Time

(VDD = 15 Vdc, ID = 75 Adc,

VGS =50Vdc

−

170

340

Turn−Off Delay Time

VGS = 5.0 Vdc,

RG = 4.7 Ω)

td(off)

−

136

Fall Time

4.7

Ω)

−

145

290

Gate Charge

−

(VDS = 24 Vdc, ID = 75 Adc,

−

8.3

−

(VDS

24 Vdc, ID

75 Adc,

VGS = 5.0 Vdc)

−

25.3

−

17.2

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.75

0.64

1.1

−

Vdc

Reverse Recovery Time

trr

−

(I =20Adc V

= 0 Vdc

−

(IS = 20 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

−

Reverse Recovery Stored

Charge

dIS/dt = 100 A/µs)

QRR

−

0.13

−

µC

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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