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6AM13 датащи(PDF) 4 Page - Hitachi Semiconductor

номер детали 6AM13
подробное описание детали  Silicon N-Channel/P-Channel Complementary Power MOS FET Array
PDF  12 Pages
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производитель  HITACHI [Hitachi Semiconductor]
домашняя страница  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

6AM13 датащи(HTML) 4 Page - Hitachi Semiconductor

  6AM13 Datasheet HTML 1Page - Hitachi Semiconductor 6AM13 Datasheet HTML 2Page - Hitachi Semiconductor 6AM13 Datasheet HTML 3Page - Hitachi Semiconductor 6AM13 Datasheet HTML 4Page - Hitachi Semiconductor 6AM13 Datasheet HTML 5Page - Hitachi Semiconductor 6AM13 Datasheet HTML 6Page - Hitachi Semiconductor 6AM13 Datasheet HTML 7Page - Hitachi Semiconductor 6AM13 Datasheet HTML 8Page - Hitachi Semiconductor 6AM13 Datasheet HTML 9Page - Hitachi Semiconductor Next Button
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6AM13
4
6
5
4
3
2
1
0
25
50
75
100
125
150
Ambient Temperature Ta (°C)
6 Device Operation
Condition : Channel dissipation of
each die is identical
4 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
60
40
20
0
25
50
75
100
125
150
Case Temperature Tc (°C)
Condition : Channel dissipation of
each die is identical
6 Device Operation
4 Device Operation
2 Device Operation
1 Device Operation
Maximum Channel Dissipation Curve
– 50
– 30
– 10
– 3
– 1
– 0.3
– 0.1
– 0.05
– 0.1
– 0.3
– 1
– 3
– 10
– 30
– 100
Drain to Source Voltage V
(V)
DS
DC
Operation
(Tc
=
25°C)
Ta = 25°C
Operation in this area
is limited by R
(on)
DS
10
s
µ
100
s
µ
Maximum Safe Operation Area
(P-Channel)
–50
–8
–20
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–40
–10
–4
–12
–16
0
–20
–30
Pulse Test
–5 V
–4 V
VGS = –3 V
–8 V
–6 V
–10 V



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