6AM13

3

Electrical Characteristics (Ta = 25°C) (1 Unit)

N channel

P channel

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Drain to source

breakdown voltage

V

(BR)DSS

60

—

—

–60

—

—

V

I

Gate to source

breakdown voltage

V

(BR)GSS

±20

—

—

±20

—

—

V

I

Gate to source leak

current

I

GSS

—

—

±10

—

—

±10

µA

V

Zero gate voltage drain

current

I

DSS

—

—

250

—

—

–250

µA

V

Gate to source cutoff

voltage

V

GS(off)

1.0

—

2.0

–1.0

—

–2.0

V

I

Static drain to source

R

DS(on)

—

0.06

0.075 —

0.09

0.12

Ω

I

1

on state resistance

—

0.08

0.11

—

0.12

0.18

Ω

I

1

Forward transfer

admittance

|y

6

9.5

—

5

8

—

S

I

1

Input capacitance

Ciss

—

860

—

—

1400 —

pF

V

Output capacitance

Coss

—

450

—

—

720

—

pF

f = 1 MHz

Reverse transfer

capacitance

Crss

—

140

—

—

220

—

pF

Turn-on delay time

t

d(on)

—10

—

—15

—

ns

I

Rise time

t

r

—50

—

—100

—

ns

R

Turn-off delay time

t

d(off)

—

180

—

—

250

—

ns

Fall time

t

f

—

110

—

—

160

—

ns

Body to drain diode

forward voltage

V

DF

—

1.0

—

—

–1.0

—

V

I

Body to drain diode

reverse recovery time

t

rr

—

120

—

—

200

—

ns

I

diF/dt = 50 A/µs

Note:

1. Pulse Test

Polarity of test conditions for P channel device is reversed.