MMDF4207 datasheet(3/11 Pages) ONSEMI

3 / 11 page

MMDF4207

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage(1)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

14.9

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C)

IDSS

−

1.0

5.0

μAdc

Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage(1)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.6

−

−2.6

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance(1)

(VGS = 4.5 Vdc, ID = 6.2 Adc)

(VGS = 2.5 Vdc, ID = 5.0 Adc)

RDS(on)

−

mΩ

Forward Transconductance (VDS = 10 Vdc, ID = 6.2 Adc)(1)

gFS

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 15 Vdc, VGS = 0 V,

f = 1.0 MHz)

Ciss

−

1210

1694

Output Capacitance

Coss

−

560

784

Transfer Capacitance

Crss

−

340

476

SWITCHING CHARACTERISTICS(2)

Turn−On Delay Time

(VDS = 10 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)(1)

td(on)

−

Rise Time

−

Turn−Off Delay Time

td(off)

−

Fall Time

−

127

Gate Charge

(VDS = 10 Vdc, ID = 6.2 Adc,

VGS = 4.5 Vdc)(1)

−

4.5

−

11.7

−

9.3

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 1.7 Adc, VGS = 0 Vdc)(1)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.87

0.72

1.2

−

Vdc

Reverse Recovery Time

(IS = 1.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)(1)

trr

−

Reverse Recovery Stored

Charge

QRR

−

0.04

−

μC

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperatures.

(3) Repetitive rating; pulse width limited by max. junction temperature.

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