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MMDF4207 датащи(PDF) 1 Page - ON Semiconductor |
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MMDF4207 датащи(HTML) 1 Page - ON Semiconductor |
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1 / 11 page ![]() © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 3 1 Publication Order Number: MMDF4207/D MMDF4207 Dual P-Channel Field Effect Transistors Medium Power Surface Mount Products These devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications • Characterized Over a Wide Range of Power Ratings • Logic Level Gate Drive − Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, with Soft Recovery • IDSS Specified at Elevated Temperature • Miniature SO−8 Surface Mount Package − Saves Board Space DUAL POWER MOSFET 6.2 AMPERES 20 VOLTS RDS(on) = 0.033 Ω SO−8 CASE 751 STYLE 11 D S G SOURCE 1 TOP VIEW GATE 1 SOURCE 2 GATE 2 DRAIN 1 DRAIN 1 DRAIN 2 DRAIN 2 1 2 3 4 8 7 6 5 See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. ORDERING INFORMATION http://onsemi.com 1 8 |
Аналогичный номер детали - MMDF4207 |
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Аналогичное описание - MMDF4207 |
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