MT4LC4M4E8DJS datasheet(7/23 Pages) MICRON

7 / 23 page

4 Meg x 4 EDO DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D47.pm5 – Rev. 3/97

4 MEG x 4

EDO DRAM

TECHNOLOGY, INC.

Icc OPERATING CONDITIONS AND MAXIMUM LIMITS

(Notes: 1, 2, 3)

3.3V

PARAMETER/CONDITION

SYM

SPEED Refresh Refresh Refresh Refresh

UNITS

NOTES

STANDBY CURRENT: TTL

ICC1

ALL

1111

(RAS# = CAS# = VIH)

STANDBY CURRENT: CMOS (non-S version only)

ICC2

ALL

500

µA

(RAS# = CAS# = other inputs = VCC -0.2V)

STANDBY CURRENT: CMOS (S version only)

ICC2

ALL

150

µA

(RAS# = CAS# = other inputs = VCC -0.2V)

OPERATING CURRENT: Random READ/WRITE

-5

110

140

120

5, 6

Average power supply current

ICC3

-6

100

130

110

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

OPERATING CURRENT: EDO PAGE MODE

-5

110

100

110

100

5, 6

Average power supply current (RAS# = VIL,ICC4

-6

100

CAS#, address cycling: tPC = tPC [MIN])

REFRESH CURRENT: RAS#-ONLY

-5

110

140

120

5, 6

Average power supply current

ICC5

-6

100

130

110

(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])

REFRESH CURRENT: CBR

-5

110

140

120

5, 7

Average power supply current

ICC6

-6

100

130

110

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

REFRESH CURRENT: Extended (S version only)

Average power supply current: CAS# = 0.2V or

ALL

300

µA

5, 7

CBR cycling; RAS# = tRAS (MIN); WE# =

ICC7

VCC -0.2V; A0-A11,OE# and DIN = VCC -0.2V or

tRC

62.5

31.25

62.5

31.25

µs25

0.2V (DIN may be left open)

REFRESH CURRENT: Self (S version only)

Average power supply current: CBR with

RAS#

≥ tRASS (MIN) and CAS# held LOW; WE# =

ICC8

ALL

300

µA

5, 7

VCC -0.2V; A0-A11, OE# and DIN = VCC -0.2V

or 0.2V (DIN may be left open)

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