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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SIS782DN датащи(PDF) 6 Page - Vishay Telefunken |
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SIS782DN датащи(HTML) 6 Page - Vishay Telefunken |
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6 / 14 page  www.vishay.com 6 Document Number: 67954 S11-1177-Rev. A, 13-Jun-11 Vishay Siliconix SiS782DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max.)= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 11 22 33 44 55 0 25 50 75 100 125 150 T C - Case Temperature (°C) Package Limited Power, Junction-to-Case 0 10 20 30 40 50 0 255075 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 025 50 75 100 125 150 T A - Ambient Temperature (°C) |
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