Document Number: 67954

S11-1177-Rev. A, 13-Jun-11

www.vishay.com

3

Vishay Siliconix

SiS782DN

This document is subject to change without notice.

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

16

A

50

Body Diode Voltage

0.44

0.55

V

Body Diode Reverse Recovery Time

18

35

ns

Body Diode Reverse Recovery Charge

7.5

15

nC

Reverse Recovery Fall Time

10

ns

Reverse Recovery Rise Time

8