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TC1307 датащи(PDF) 3 Page - Microchip Technology

номер детали TC1307
подробное описание детали  Four-Channel CMOS LDO with Select Mode, Shutdown and Independent Reset
PDF  28 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC1307 датащи(HTML) 3 Page - Microchip Technology

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 2002 Microchip Technology Inc.
DS21702A-page 3
TC1307
VOUT Temperature Coefficient
LDO1/LDO2/LDO3/LDO4
TCVOUT
—20
40
—ppm/°C Note 3
Line Regulation LDO1/LDO2/
LDO3/LDO4
∆VOUT/(VOUTx∆VIN)
0.05
0.2
%/V
(VR+1) ≤ VIN ≤ 6.0V
Load Regulation
LDO1/LDO2/LDO3/LDO4
∆VOUT/VOUT
——
2.0
%IL = 0.1 mA to IOUT_MAX
Note 4
Thermal Regulation
LDO1/LDO2/LDO3/LDO4
∆VOUT/∆PD
—0.04
V/W
Note 5
Dropout Voltage
LDO1/LDO2/LDO3/LDO4
VIN-VOUT
—2
mV
IL = 100 µA, Note 6
—15
IL = 20 mA, Note 6
—35
90
IL = 50 mA, Note 6
—100
280
IL = 150 mA, Note 6
Output Noise
LDO1/LDO2/LDO3/LDO4
eN
—1.2
µV/(Hz)½ IOUT = 100 mA, f = 10 kHz
C
OUT = 1 µF to noise
Over Temperature Protection Characteristics:
Thermal Shutdown Protection
TSD
150
°C
Note 7
Thermal Shutdown Hysteresis
∆TSD
10
°C
SHDN Input Characteristics:
SHDN Input High Threshold
VIH
60
——
% of VIN VIN = 2.7V to 6.0V
SHDN Input Low Threshold
VIL
——
15
% of VIN VIN = 2.7V to 6.0V
Wake-up Time
(from SHDN mode)
tWK
—10
µsec
VIN = 5V, IL = 100 mA,
COUT = 1 µF, CIN = 1 µF,
see Figure 4-1
Settling Time
(from SHDN mode)
tS
—40
µsec
VIN = 5V, IL = 100 mA,
COUT = 1 µF, CIN = 1 µF,
See Figure 4-1
Shutdown Leakage Current
ISHDN
±0.01
nA
VSHDN = VIN or GND
SELECT Input Characteristics:
SELECT Input High Threshold
VSELH
VIN-0.2
——
V
VIN = 2.7V to 6.0V
SELECT Input Low Threshold
VSELL
——
0.2
VVIN = 2.7V to 6.0V
SELECT Input Leakage
Current
ISELECT
±0.11
±0.06
µA
VSELECT = VIN
VSELECT = GND
RESET Output Characteristics:
Detect Operating
Voltage Range
VDET
1.0
1.2
6.0
6.0
VTA = 0°C to +70°C
TA = -40°C to +125°C
Unless otherwise specified, all limits are established for VIN = VR+1, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = 25°C.
Boldface type specifications apply for junction temperatures, TJ (Note 9) of -40°C to +125°C.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Note 1: The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%) + VDROPOUT.
2: VR is the nominal regulator output voltage. For example: VR = 1.8V, 2.5V, 2.8V or 3.0V.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) * 10
6 / (VR * ∆Temperature), VOUT-HIGH = Highest voltage measured over the tempera-
ture range. VOUT-LOW = Lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is
tested over a load range from 1mA to the maximum specified output current. Changes in output voltage due to heating
effects are determined using thermal regulation specification TCVOUT.
5: Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied.
Specifications are for a current pulse equal to ILMAX at VIN = 6.0V for t = 10 msec.
6: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
with a 1V differential applied.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temper-
ature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipa-
tion will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction
temperatures above 150°C can impact the device reliability.
8: VTH-MIN = 2.55V and VTH-MAX = 2.70V.
9: The Junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the Ambi-
ent temperature is not significant.



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