UTT4425G-S08-R datasheet(4/5 Pages) UTC

4 / 5 page

UTT4425

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R502-562.b



ELECTRICAL CHARACTERISTICS (TJ =25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS =0 V, ID =-250µA

-30

Drain-Source Leakage Current

IDSS

VDS =-30V, VGS =0 V

-100

VDS =-30V,VGS =0V, TJ =55°C

-500

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

µA

Reverse

VGS=-20V, VDS=0V

-1

Forward

VGS=+25V, VDS=0V

+10

Reverse

VGS=-25V, VDS=0V

-10

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS =VGS, ID =-250 µA

-2

-2.5

-3.5

Drain-Source On-State Resistance

RDS(ON)

VGS =-20V, ID =-14A

7.7

mΩ

VGS =-20V,ID=-14A,TJ =125°C

13.5

mΩ

VGS =-10V, ID =-14A

8.8

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =-20 V, VGS =0V,

f=1MHz

3800

Output Capacitance

COSS

560

Reverse Transfer Capacitance

CRSS

350

Gate Resistance

VDS =0V, VGS =0V, f=1MHz

7.5

Ω

SWITCHING PARAMETERS

Total Gate Charge

VDS =-20V, VGS =-10V,

ID=-14A (Note 1 ,2)

Gate Source Charge

QGS

14.1

Gate Drain Charge

QGD

16.1

Turn-ON Delay Time

tD(ON)

VDS =-20V, VGS =-10V,

RL=1.35Ω, RGEN=3Ω

(Note 1 ,2)

12.4

Turn-ON Rise Time

9.2

Turn-OFF Delay Time

tD(OFF)

97.5

Turn-OFF Fall-Time

45.5

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=-1A, VGS=0V

-0.71

-1

Maximum Continuous Drain-Source Diode

Forward Current

-4.2

Body Diode Reverse Recovery Time

tRR

IF=-14A, dI/dt=100A/μs

Body Diode Reverse Recovery Charge

QRR

IF=-14A,dI/dt=100A/μs

(Note 1)

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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