UTT4425G-S08-R datasheet(3/5 Pages) UTC

номер детали	UTT4425G-S08-R

подробное описание детали	P-CHANNEL ENHANCEMENT MOSFET

PDF	5 Pages

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производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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UTT4425

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-562.b



ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±25

Drain Current

Continuous

(Note 2)

TA = 25°C

-14

TA = 70°C

-11

Pulsed (Note 3)

IDM

-50

Power Dissipation (Note 2)

TA = 25°C

3.1

TA = 70°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 2)

θJA

°C/W

Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C. The value in any given application depends on the user's specific board design.

The current rating is based on the t ≤ 10s thermal resistance rating.

3. Repetitive rating, pulse width limited by junction temperature.

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