LM4810 datasheet(4/25 Pages) TI

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LM4810

SNAS125D – FEBRUARY 2001 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

6.0V

Storage Temperature

−65°C to +150°C

ESD Susceptibility (3)

3.5kV

ESD Machine Model (4)

250V

Junction Temperature (TJ)

150°C

Vapor Phase (60 sec.)

215°C

Soldering Information

SOIC Package

Infrared (15 sec.)

220°C

θJA (SOIC)

170°C/W

θJC (SOIC)

35°C/W

θJA (VSSOP)

210°C/W

Thermal Resistance

θJC (VSSOP)

56°C/W

θJA (WSON)

117°C/W (5)

θJA (WSON)

150°C/W (6)

θJC (WSON)

15°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.

(2)

Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

Human body model, 100pF discharged through a 1.5k

Ω resistor.

(4)

Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage, then

discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ohms).

(5)

The given

θJA is for an LM4810 packaged in an NGL0008B with the Exposed-Dap soldered to a printed circuit board copper pad with an

area equivalent to that of the Exposed-Dap itself.

(6)

The given

θJA is for an LM4810 packaged in an NGL0008B with the Exposed-Dap not soldered to any circuit board copper.

Operating Ratings

(1)

Temperature Range

TMIN ≤ TA ≤ TMAX

−40°C ≤ T A ≤ 85°C

Supply Voltage (VCC

2.0V

≤ V CC ≤ 5.5V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.

Electrical Characteristics

(1) (2)

The following specifications apply for VDD = 5V unless otherwise specified, limits apply to TA = 25°C.

LM4810

Units

Parameter

Test Conditions

(Limits)

Typ (3)

Limit (4)

VDD

Supply Voltage

2.0

V (min)

5.5

V (max)

IDD

Supply Current

VIN = 0V, IO = 0A

1.3

mA(max)

ISD

Shutdown Current

VIN = 0V, VSHUTDOWN = VDD

0.4

µA(max)

VOS

Output Offset Voltage

VIN = 0V

4.0

mV(max)

Output Power

THD+N = 0.1%, f = 1kHz

RL = 16Ω

105

RL = 32Ω

mW(min)

THD+N

Total Harmonic Distortion

PO = 50mW, RL = 32Ω

0.3

f = 20Hz to 20kHz

Crosstalk

Channel Separation

RL = 32Ω; PO = 70mW

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.

(2)

All voltages are measured with respect to the ground pin, unless otherwise specified.

(3)

Typical specifications are specified at +25OC and represent the most likely parametric norm.

(4)

Datasheet max/min specification limits are ensured by design, test, or statistical analysis.

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