LMP7731 datasheet(2/26 Pages) TI

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LMP7731

SNOSAT6E – JULY 2007 – REVISED MARCH 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

ESD Tolerance (3)

Human Body Model

Inputs pins only

2000V

All other pins

2000V

Machine Model

200V

Charge Device Model

1000V

VIN Differential

±2V

Supply Voltage (VS = V

+ – V−)

6.0V

Storage Temperature Range

−65°C to 150°C

Junction Temperature (4)

+150°C max

Soldering Information

Infrared or Convection (20 sec)

235°C

Wave Soldering Lead Temp. (10 sec)

260°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics Tables.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of

JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

(4)

The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is

PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.

Operating Ratings

(1)

Temperature Range

−40°C to 125°C

Supply Voltage (VS = V

+ – V–)

1.8V to 5.5V

Package Thermal Resistance (

θJA)

5-Pin SOT-23

265°C/W

8-Pin SOIC

190°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics Tables.

2.5V Electrical Characteristics

(1)

Unless otherwise specified, all limits are ensured for TA = 25°C, V

+ = 2.5V, V− = 0V, V

CM = V

+/2, R

L >10 kΩ to V

+/2. Boldface

limits apply at the temperature extremes.

Parameter

Test Conditions

Min (2)

Typ (3)

Max (2)

Units

±500

VCM = 2.0V

±9

±600

Input Offset Voltage

VOS

μV

(4)

±500

VCM = 0.5V

±9

±600

VCM = 2.0V

±0.5

±5.5

Input Offset Voltage Temperature

TCVOS

μV/°C

Drift

VCM = 0.5V

±0.2

±5.5

±30

VCM = 2.0V

±1

±45

Input Bias Current

±50

VCM = 0.5V

±12

±75

(1)

Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under

conditions of internal self-heating where TJ > TA. Absolute maximum Ratings indicate junction temperature limits beyond which the

device maybe permanently degraded, either mechanically or electrically.

(2)

All limits are specified by testing, statistical analysis or design.

(3)

Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

(4)

Ambient production test is performed at 25°C with a variance of ±3°C.

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