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TLS820F0 датащи(PDF) 8 Page - Infineon Technologies AG |
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TLS820F0 датащи(HTML) 8 Page - Infineon Technologies AG |
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8 / 41 page ![]() Data Sheet 8 Rev. 1.1, 2015-07-27 TLS820F0 General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Note: 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Table 1 Absolute Maximum Ratings1) T j = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified) 1) Not subject to production test, specified by design. Parameter Symbol Values Unit Note / Test Condition Number Min. Typ. Max. Input I, Enable EN Voltage V I, VEN -0.3 – 45 V – P_4.1.1 Output Q, Reset Output RO, Watchdog Output WO Voltage V Q, VRO, V WO -0.3 – 7 V – P_4.1.3 Watchdog Input WI, Delay Timing DT1 and DT2, Reset Threshold Adjustment RADJ Voltage V WI,VDT1, V DT2, VRADJ -0.3 – 7 V – P_4.1.5 Temperatures Junction Temperature T j -40 – 150 °C – P_4.1.7 Storage Temperature T stg -55 – 150 °C – P_4.1.8 ESD Absorption ESD Susceptibility to GND V ESD -2 – 2 kV 2) HBM 2) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) P_4.1.9 ESD Susceptibility to GND V ESD -500 – 500 V 3) CDM 3) ESD susceptibility, Charged Device Model “CDM” according JEDEC JESD22-C101 P_4.1.10 ESD Susceptibility Pin 1, 7, 8, 14 (corner pins) to GND V ESD1,7,8,14 -750 – 750 V 3) CDM P_4.1.11 |
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