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HIP2103 датащи(PDF) 18 Page - Intersil Corporation |
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HIP2103 датащи(HTML) 18 Page - Intersil Corporation |
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18 / 21 page ![]() HIP2103, HIP2104 18 FN8276.0 November 27, 2013 Submit Document Feedback But this solution also has its limitations. Depending on the value of the filter capacitor and the PWM switching frequency, RHS may dissipate significant power because the voltage on the capacitor is switching between the bridge voltage and ground. Usually, the power dissipated by RHS is small because the switching frequency for most motor drives is <20kHz and the value used for Cfilter is typically about 1000pF. Another issue is that the charge on Cfilter will be partially transferred to the gate of the high-side FET when the low-side FET turns on. When the phase node goes low, a voltage is impressed across RHS as shown in Figure 27. Because HO is low, the voltage across RHS is also across the gate of the high side FET. If the filter cap is very large, the voltage on the gate will approach the bridge voltage turning on the high-side FET resulting with shoot-through. Fortunately, the voltage across RHS is much less than the bridge voltage for two reasons. First, the voltage across RHS is determined by the turn-on time of the low side FET. As the low-side FET is turning on, the charge on the filter cap is depleting lessening the voltage across RHS. Also, because the relatively large gate capacitance of the high-side FET is in parallel with RHS, the voltage impressed on the gate is further reduced. In a practical application using value of Cfilter = 4700pF and RHS =1Ω, the voltage impressed on the bridge FET is less than 1V. The emphasis of suppressing transients on the HS pin has been with negative transients. Please note that a similar transients with a positive polarity occurs when the low-side FET turns off. This is usually not a problem unless the bridge voltage is close to the maximum rated operating voltage of 50V. Note that the maximum voltage ratings for the HS and HB nodes also must be observed when the positive transient occurs. The maximum rating for (VHB - VHS) must also not be overlooked. When a negative transient, Vneg, is present on the HS pin, the voltage differential across HB and HS will approach VDD + Vneg. If the transient duration is short compared to the charging time constant of the boot diode and boot capacitor, the voltage across HB and HS is not significantly affected. However, another source of negative voltage on the HS pin will more likely increase the boot capacitor voltage. While current is flowing from the source to drain of the low-side FET during the dead time, the current flows through body diode of the FET. Depending on the size of the FET and the amplitude of the reverse current, the voltage across the diode can be as high as -1.5V and much higher during a load fault. Because this negative voltage has little impedance, the boot capacitor can charge to a voltage greater than VDD (for example VDD + 1.5V). It may be necessary to either clamp the voltage as described in Figures 25 through 27 and/or keep the dead time as short as possible. General PCB Layout Guidelines The AC performance of the HIP2103, HIP2104 depends significantly on the design of the PC board. The following layout design guidelines are recommended to achieve optimum performance: • Place the driver as close as possible to the driven power FET. • Understand where the switching power currents flow. The high amplitude di/dt currents of the driven power FET will induce significant voltage transients on the associated traces. • Keep power loops as short as possible by paralleling the source and return traces. • Use planes where practical; they are usually more effective than parallel traces. • Avoid paralleling high amplitude di/dt traces with low level signal lines. High di/dt will induce currents and consequently, noise voltages in the low level signal lines. • When practical, minimize impedances in low level signal circuits. Noise, magnetically induced on a 10kΩ resistor, is 10x larger than the noise on a 1kΩ resistor. • Be aware of magnetic fields emanating from motors and inductors. Gaps in the magnetic cores of these structures are especially bad for emitting flux. • If you must have traces close to magnetic devices, align the traces so that they are parallel to the flux lines to minimize coupling. • The use of low inductance components such as chip resistors and chip capacitors is highly recommended. • Use decoupling capacitors to reduce the influence of parasitic inductance in the VBAT, VDD and GND leads. To be effective, these caps must also have the shortest possible conduction paths. If vias are used, connect several paralleled vias to reduce the inductance of the vias. • It may be necessary to add resistance to dampen resonating parasitic circuits especially on LO and LO. If an external gate resistor is unacceptable, then the layout must be improved to minimize lead inductance. • Keep high dv/dt nodes away from low level circuits. Guard banding can be used to shunt away dv/dt injected currents from sensitive circuits. • Avoid having a signal ground plane under a high amplitude dv/dt circuit. The parasitic capacitance of a ground plane, Cp, relative to the high amplitude dv/dt circuit will result in injected (Cp x dv/dt) currents into the signal ground paths where C is the parasitic capacitance of the ground plane. • Do power dissipation and voltage drop calculations of the power traces. Many PCB/CAD programs have built in tools for calculation of trace resistance. The internet is also a good source for resistance calculators for PCB trace resistance. FIGURE 27. RESISTOR AND CAPACITOR NEGATIVE TRANSIENT FILTER VSS HS LO HO Inductive Load RHS HB CBOOT + _ Cfilter IBAT, 0kHz |
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