PUSB3TB6

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 1 — 19 August 2014

3 of 13

NXP Semiconductors

PUSB3TB6

ESD protection for ultra high-speed interfaces

6.

Characteristics

[1]

This parameter is guaranteed by design.

[2]

[3]

100 ns Transmission Line Pulse (TLP); 50

; pulser at 80 ns.

Table 5.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

breakdown voltage

6

--V

reverse leakage current

-

1

100

nA

line capacitance

[1] -

0.27

0.35

pF

C

line

line capacitance

difference

[1] -

0.03

0.05

pF

dynamic resistance

surge

[2]

positive transient

-

0.5

-



negative transient

-

0.5

-



TLP

[3]

positive transient

-

0.6

-



negative transient

-

0.6

-



clamping voltage

[2]

positive transient

-

4.8

-

V

[2]

negative transient

-

4.8

-

V