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PUSB3TB6 датащи(PDF) 1 Page - NXP Semiconductors |
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PUSB3TB6 датащи(HTML) 1 Page - NXP Semiconductors |
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1 / 13 page ![]() 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed and Hi - Speed USB combination, Secure Digital (SD) card 3.0 and Thunderbolt interfaces against ElectroStatic Discharge (ESD). The device includes six high-level ESD protection diode structures for ultra high-speed signal lines and is encapsulated in a DFN2111-7 (SOT1358-1) leadless ultra small Surface-Mounted Device (SMD) plastic package. All signal lines are protected by a special diode structure offering ultra low line capacitance of only 0.27 pF. These diodes utilize a unique snap-back structure in order to provide protection to downstream components from ESD voltages up to 10 kV contact exceeding IEC 61000-4-2, level 4. 1.2 Features and benefits System ESD protection for USB 2.0 and USB 3.0 combination, SD card 3.0 and Thunderbolt interfaces All signal lines with integrated rail-to-rail clamping diodes for downstream ESD protection of 10 kV exceeding IEC 61000-4-2, level 4 Matched 0.5 mm trace spacing Signal lines with 0.05 pF matching capacitance between signal pairs Line capacitance of only 0.27 pF for each channel Design-friendly pass-through signal routing 1.3 Applications The device is designed for high-speed receiver and transmitter port protection: Portable and wearable devices Smartphones and tablet PCs TVs and monitors DVD recorders and players Notebooks, main board graphic cards and ports Set-top boxes and game consoles PUSB3TB6 ESD protection for ultra high-speed interfaces Rev. 1 — 19 August 2014 Product data sheet |
Аналогичный номер детали - PUSB3TB6_15 |
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Аналогичное описание - PUSB3TB6_15 |
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