PMZB200UNE_15 datasheet(1/14 Pages) PHILIPS

номер детали	PMZB200UNE

подробное описание детали	30 V, N-channel Trench MOSFET

PDF	14 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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PMZB200UNE

30 V, N-channel Trench MOSFET

12 March 2015

Product data sheet

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1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Very fast switching

• Low threshold voltage

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection: 2 kV HBM

• Ultra thin package profile of 0.37 mm

3. Applications

• Relay driver

• High-speed line driver

• Low-side loadswitch

• Switching circuits

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

30

V

VGS

gate-source voltage

Tj = 25 °C

-8

-

8

V

ID

drain current

VGS = 4.5 V; Tamb = 25 °C

[1]

-

1.4

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C

-

210

250

mΩ

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

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Nexperia B.V. All right...	PMZB200UNE	724Kb / 14P	30 V, N-channel Trench MOSFET

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PMZB200UNE датащи(PDF) 1 Page - NXP Semiconductors

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Аналогичный номер детали - PMZB200UNE_15

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