PMZB200UNE_15 datasheet(4/14 Pages) PHILIPS

номер детали	PMZB200UNE

подробное описание детали	30 V, N-channel Trench MOSFET

PDF	14 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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NXP Semiconductors

PMZB200UNE

30 V, N-channel Trench MOSFET

PMZB200UNE

All information provided in this document is subject to legal disclaimers.

Product data sheet

12 March 2015

4 / 14

aaa-016973

VDS (V)

10-1

102

10-1

(A)

10-2

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 1 cm2

tp = 10 µs

tp = 100 µs

tp = 1 ms

tp = 100 ms

tp = 10 ms

IDM = single pulse

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

315

360

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[2]

145

165

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.

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