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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRL5NJ024 датащи(PDF) 1 Page - International Rectifier |
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IRL5NJ024 датащи(HTML) 1 Page - International Rectifier |
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1 / 7 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 17 ID @ VGS = 10V, TC = 100°C Continuous Drain Current 11 IDM Pulsed Drain Current ➀ 68 PD @ TC = 25°C Max. Power Dissipation 35 W Linear Derating Factor 0.28 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy ➁ 56 mJ IAR Avalanche Current ➀ 11 A EAR Repetitive Avalanche Energy ➀ 3.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 4.3 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temperature 300 (for 5 s) Weight 2.6 g Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. oC A LOGIC LEVEL IRL5NJ024 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) 7/13/01 www.irf.com 1 55V, N-CHANNEL SMD-0.5 Product Summary Part Number BVDSS RDS(on) ID IRL5NJ024 55V 0.06 Ω 17A Features: n Logic Level Gate Drive n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight For footnotes refer to the last page PD - 93955A |
Аналогичный номер детали - IRL5NJ024 |
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Аналогичное описание - IRL5NJ024 |
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