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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRL5NJ024 датащи(PDF) 2 Page - International Rectifier |
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IRL5NJ024 датащи(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRL5NJ024 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 3.57 °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 17 ISM Pulse Source Current (Body Diode) ➀ —— 68 VSD Diode Forward Voltage — — 1.3 V Tj = 25°C, IS = 11A, VGS = 0V ➃ trr Reverse Recovery Time — — 90 nS Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 200 nC VDD ≤ 25V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.060 VGS = 10V, ID = 11A ––– ––– 0.075 Ω VGS = 5.0V, ID = 11A ––– ––– 0.105 VGS = 4.0V, ID = 9.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 11 A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 15 ID = 11A Qgs Gate-to-Source Charge ––– ––– 3.7 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V td(on) Turn-On Delay Time ––– ––– 11 VDD = 28V tr Rise Time ––– ––– 133 ns ID = 11A td(off) Turn-Off Delay Time ––– ––– 35 RG = 12 Ω tf Fall Time ––– ––– 66 VGS = 5.0V LS + LD Total Inductance ––– 4.0 ––– nH Measured from the center of drain pad to center of source pad Ciss Input Capacitanc ––– 514 ––– VGS = 0V, VDS = 25V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current Crss Reverse Transfer Capacitance ––– 51 ––– Coss Output Capacitance ––– 137 ––– pF ƒ = 1.0MHz |
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