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BCP53 датащи(PDF) 13 Page - NXP Semiconductors |
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BCP53 датащи(HTML) 13 Page - NXP Semiconductors |
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13 / 22 page ![]() BCP53_BCX53_BC53PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 9 — 19 October 2011 13 of 22 NXP Semiconductors BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors VCE = 2V (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 55 C Tamb =25 C Fig 15. DC current gain as a function of collector current; typical values Fig 16. Collector current as a function of collector-emitter voltage; typical values VCE = 2V (1) Tamb = 55 C (2) Tamb =25 C (3) Tamb = 100 C IC/IB =10 (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 55 C Fig 17. Base-emitter voltage as a function of collector current; typical values Fig 18. Collector-emitter saturation voltage as a function of collector current; typical values 006aac688 100 200 300 hFE 0 IC (A) –10–4 –10 –1 –10–3 –10–1 –10–2 (1) (2) (3) VCE (V) 0 −2.0 −1.6 −0.8 −1.2 −0.4 006aaa230 −0.8 −0.4 −1.2 −1.6 IC (A) 0 −4.5 −9 −13.5 −18 −22.5 −27 −31.5 IB (mA) = −45 −40.5 −36 006aac689 –0.4 –0.8 –1.2 VBE (V) 0.0 IC (mA) –10–1 –104 –103 –1 –102 –10 (1) (2) (3) 006aac690 –1 –10–1 –10 VCEsat (V) –10–2 IC (mA) –10–1 –104 –103 –1 –102 –10 (1) (2) (3) |
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