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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFS7434PBF датащи(PDF) 3 Page - International Rectifier |
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IRFS7434PBF датащи(HTML) 3 Page - International Rectifier |
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3 / 12 page  IRFS/SL7434PbF 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 S D G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 211 ––– ––– S Qg Total Gate Charge ––– 216 324 Qgs Gate-to-Source Charge ––– 51 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 77 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 139 ––– td(on) Turn-On Delay Time ––– 24 ––– tr Rise Time ––– 68 ––– td(off) Turn-Off Delay Time ––– 115 ––– tf Fall Time ––– 68 ––– Ciss Input Capacitance ––– 10820 ––– Coss Output Capacitance ––– 1540 ––– Crss Reverse Transfer Capacitance ––– 1140 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1880 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 2208 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)Ãd VSD Diode Forward Voltage ––– 0.9 1.3 V dv/dt Peak Diode RecoveryÃfà ––– 5.0 ––– V/ns trr Reverse Recovery Time ––– 38 ––– TJ = 25°C VR = 34V, –––37––– TJ = 125°C IF = 100A Qrr Reverse Recovery Charge ––– 50 ––– TJ = 25°C di/dt = 100A/μs g –––50––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C TJ = 175°C, IS = 100A, VDS = 40V Conditions VDS = 10V, ID = 100A ID = 100A VDS =20V VGS = 10V g VDD = 20V ID = 100A, VDS =0V, VGS = 10V TJ = 25°C, IS = 100A, VGS = 0V g integral reverse p-n junction diode. MOSFET symbol showing the ID = 30A RG = 2.7 Ω Conditions VGS = 10V g VGS = 0V nC ns pF VDS = 25V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V i, See Fig. 12 VGS = 0V, VDS = 0V to 32V h A ns nC 320 ––– ––– ––– ––– 1270* |
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