IRFS7434PBF datasheet(2/12 Pages) IRF

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IRFS/SL7434PbF

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November 19, 2014

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A

by source

bonding technology . Note that current limitations arising from

heating of the device leads may occur with some lead mounting

arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.099mH

RG = 50Ω, IAS = 100A, VGS =10V.

ISD ≤ 100A, di/dt ≤ 1307A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

Rθ is measured at TJ approximately 90°C.

Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 47A, VGS =10V.

When mounted on 1" square PCB (FR-4 or G-10 Material).

Please refer to AN-994 for more details:

http://www.irf.com/technical-info/appnotes/an-994.pdf

∗ Pulse drain current is limited at 780A by source bonding technology.

Absolute Maximum Ratings

Symbol

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

IDM

Pulsed Drain Current

PD @TC = 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery

ÃfÃ

V/ns

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy e

EAS (Thermally limited)

Single Pulse Avalanche Energy k

IAR

Avalanche CurrentÃd

EAR

Repetitive Avalanche Energy d

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case j

–––

0.5

RθJA

Junction-to-Ambient (PCB Mount) , D2Pak l

–––

°C/W

Max.

320

226

1270 *

195

1098

-55 to + 175

± 20

1.96

See Fig. 14, 15 , 22a, 22b

°C

300

490

294

5.0

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

ΔV(BR)DSS/ΔTJ

Breakdown Voltage Temp. Coefficient

–––

mV/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.25

1.6

1.8

–––

VGS(th)

Gate Threshold Voltage

2.2

3.0

3.9

IDSS

Drain-to-Source Leakage Current

–––

1.0

–––

150

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Internal Gate Resistance

–––

2.1

–––

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5mAd

VGS = 10V, ID = 100A

VGS = 6.0V, ID = 50A

VDS = VGS, ID = 250μA

μA

VDS = 40V, VGS = 0V

VDS = 40V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

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