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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFS7430PBF датащи(PDF) 3 Page - International Rectifier |
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IRFS7430PBF датащи(HTML) 3 Page - International Rectifier |
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3 / 12 page  IRFS/SL7430PbF www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 3 S D G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 150 ––– ––– S Qg Total Gate Charge ––– 300 460 nC Qgs Gate-to-Source Charge ––– 77 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 98 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 202 ––– td(on) Turn-On Delay Time ––– 32 ––– ns tr Rise Time ––– 105 ––– td(off) Turn-Off Delay Time ––– 160 ––– tf Fall Time ––– 100 ––– Ciss Input Capacitance ––– 14240 ––– pF Coss Output Capacitance ––– 2130 ––– Crss Reverse Transfer Capacitance ––– 1460 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 2605 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 2920 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 426 A (Body Diode) ISM Pulsed Source Current ––– ––– 1524 A (Body Diode) Ãd VSD Diode Forward Voltage ––– 0.86 1.2 V dv/dt Peak Diode Recovery f ––– 2.7 ––– V/ns trr Reverse Recovery Time ––– 52 ––– ns TJ = 25°C VR = 34V, ––– 52 ––– TJ = 125°C IF = 100A Qrr Reverse Recovery Charge ––– 97 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 97 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.3 ––– A TJ = 25°C Conditions VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz VDS =20V ID = 100A ID = 30A VDD = 20V ID = 100A, VDS =0V, VGS = 10V RG = 2.7 Ω VGS = 10V g Conditions VDS = 10V, ID = 100A TJ = 25°C, IS = 100A, VGS = 0V g integral reverse showing the p-n junction diode. MOSFET symbol VGS = 0V, VDS = 0V to 32V i VGS = 0V, VDS = 0V to 32V h TJ = 175°C, IS = 100A, VDS = 40V |
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