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IRF7904PBF датащи(PDF) 1 Page - International Rectifier

номер детали IRF7904PBF
подробное описание детали  Improved Body Diode Reverse Recovery
PDF  10 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7904PBF датащи(HTML) 1 Page - International Rectifier

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www.irf.com
1
07/10/06
IRF7904PbF
HEXFET® Power MOSFET
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for RG
l Lead-Free
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
VDSS
ID
30V
Q1 16.2m
:@V
GS = 10V
7.6A
Q2 10.8m
:@V
GS = 10V
11A
RDS(on) max
Absolute Maximum Ratings
Parameter
Q1 Max.
Q2 Max.
Units
V
DS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
I
D @ TA = 25°C
Continuous Drain Current, V
GS @ 10V
7.6
11
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
6.1
8.9
A
I
DM
Pulsed Drain Current
c
61
89
PD @TA = 25°C
Power Dissipation
1.4
2.0
W
P
D @TA = 70°C
Power Dissipation
0.9
1.3
Linear Derating Factor
0.011
0.016
W/°C
T
J
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Q1 Max.
Q2 Max.
Units
RθJL
Junction-to-Drain Lead
g
20
20
°C/W
RθJA
Junction-to-Ambient
fg
90
62.5
± 20
30
-55 to + 150
SO-8
T ÃÃ9!
T ÃÃ9!
9
B
B!
T!
T ÃÃ9!
T!








PD - 96919B


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