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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7904PBF датащи(PDF) 2 Page - International Rectifier |
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IRF7904PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7904PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Q1&Q2 30 ––– ––– V ∆ΒV DSS/ ∆T J Breakdown Voltage Temp. Coefficient Q1 ––– 0.024 ––– V/°C Q2 ––– 0.024 ––– Q1 ––– 11.4 16.2 RDS(on) Static Drain-to-Source On-Resistance ––– 14.5 20.5 m Ω Q2 ––– 8.6 10.8 ––– 10 13 VGS(th) Gate Threshold Voltage Q1&Q2 1.35 ––– 2.25 V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient Q1 ––– -5.0 ––– mV/°C Q2 ––– -5.0 ––– IDSS Drain-to-Source Leakage Current Q1&Q2 ––– ––– 1.0 µA Q1&Q2 ––– ––– 150 IGSS Gate-to-Source Forward Leakage Q1&Q2 ––– ––– 100 nA Gate-to-Source Reverse Leakage Q1&Q2 ––– ––– -100 gfs Forward Transconductance Q1 17 ––– ––– S Q2 23 ––– ––– Qg Total Gate Charge Q1 ––– 7.5 11 Q2 ––– 14 21 Qgs1 Pre-Vth Gate-to-Source Charge Q1 ––– 2.2 ––– Q1 Q2 ––– 3.7 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge Q1 ––– 0.6 ––– nC VGS = 4.5V, ID = 6.1A Q2 ––– 1.1 ––– Qgd Gate-to-Drain Charge Q1 ––– 2.5 ––– Q2 Q2 ––– 4.8 ––– VDS = 15V Qgodr Gate Charge Overdrive Q1 ––– 2.2 ––– VGS = 4.5V, ID = 8.8A Q2 ––– 4.4 ––– Qsw Switch Charge (Qgs2 + Qgd) Q1 ––– 3.1 ––– Q2 ––– 5.9 ––– Qoss Output Charge Q1 ––– 4.5 ––– nC Q2 ––– 9.1 ––– RG Gate Resistance Q1 ––– 3.2 4.8 Ω Q2 ––– 2.9 4.4 td(on) Turn-On Delay Time Q1 ––– 6.9 ––– Q2 ––– 7.8 ––– tr Rise Time Q1 ––– 7.3 ––– ID = 6.1A Q2 ––– 10 ––– ns td(off) Turn-Off Delay Time Q1 ––– 10 ––– Q2 ––– 15 ––– tf Fall Time Q1 ––– 3.2 ––– ID = 8.8A Q2 ––– 4.6 ––– Ciss Input Capacitance Q1 ––– 910 ––– Q2 ––– 1780 ––– Coss Output Capacitance Q1 ––– 190 ––– pF Q2 ––– 390 ––– Crss Reverse Transfer Capacitance Q1 ––– 94 ––– Q2 ––– 180 ––– Avalanche Characteristics Parameter Q1 Max. Q2 Max. Units EAS Single Pulse Avalanche Energy d 140 250 mJ IAR Avalanche Current 6.1 8.8 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current Q1 ––– ––– 1.8 A (Body Diode) Q2 ––– ––– 2.5 ISM Pulsed Source Current Q1 ––– ––– 61 A (Body Diode) Ã Q2 ––– ––– 88 VSD Diode Forward Voltage Q1 ––– ––– 1.0 V Q2 ––– ––– 1.0 trr Reverse Recovery Time Q1 ––– 11 17 ns Q2 ––– 16 24 Qrr Reverse Recovery Charge Q1 ––– 2.6 3.9 nC Q2 ––– 6.9 10 VGS = 4.5V, ID = 6.1A e VGS = 4.5V, ID = 8.8A e VDS = 15V, ID = 8.8A VDD = 15V, VGS = 4.5V VGS = 10V, ID = 11A e Q1: VDS = VGS, ID = 25µA VDS = 15V, ID = 6.1A VDS = 24V, VGS = 0V, TJ = 125°C VDD = 15V, VGS = 4.5V ––– VDS = 15V Clamped Inductive Load VGS = 0V ƒ = 1.0MHz Typ. ––– Q1 TJ = 25°C, IF = 6.1A, VDD = 15V, di/dt = 100A/µs e TJ = 25°C, IS = 6.1A, VGS = 0V e showing the integral reverse p-n junction diode. TJ = 25°C, IS = 8.8A, VGS = 0V e Q2 TJ = 25°C, IF = 8.8A, VDD = 15V, di/dt = 100A/µs e MOSFET symbol Q2: VDS = VGS, ID = 50µA VDS = 16V, VGS = 0V Q1 VGS = 20V VGS = -20V VDS = 24V, VGS = 0V Conditions Q2 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.6A e |
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