ZXTP2012Z_15 datasheet(4/7 Pages) DIODES

4 / 7 page

ZXTP2012Z

Datasheet Number: DS33713 Rev. 3 - 2

4 of 7

www.diodes.com

October 2012

ZXTP2012Z

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-100

-120

IC = -100µA

Collector-Emitter Breakdown Voltage (Notes 9)

BVCER

-100

-120

IC = -1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Notes 9)

BVCEO

-60

-80

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.1

IE = -100µA

Collector Cutoff Current

ICBO

< -1

-20

-500

VCB = -80V

VCB = -80V, TA = +100°C

Collector Cutoff Current

ICER

R ≤1k

Ω

< -1

-20

-500

VCB = -80V

VCB = -80V, TA = +100°C

Emitter Cutoff Current

IEBO

< -1

-10

VEB = -6V

DC current transfer Static ratio (Notes 9)

hFE

100

250

200

300

IC = -10mA, VCE = -1V

IC = -2A, VCE = -1V

IC = -5A, VCE = -1V

IC = -10A, VCE = -1V

Collector-Emitter Saturation Voltage (Notes 9)

VCE(sat)

-14

-50

-75

-160

-20

-65

-110

-215

IC = -100mA, IB = -10mA

IC = -1A, IB = -100mA

IC = -2A, IB = -200mA

IC = -5A, IB = -500mA

Base-Emitter Saturation Voltage (Notes 9)

VBE(sat)

-950

-1050

IC = -5A, IB = -500mA

Base-Emitter Turn-on Voltage (Notes 9)

VBE(on)

-840

-950

IC = -5A, VCE = -1V

Transitional Frequency (Notes 9)

120

MHz

IC = -100mA, VCE = -10V,

f = 50MHz

Output capacitance

Cobo

VCB = -10V, f = 1MHz,

Switching Time

tON

VCC = -10V, IC = -1A,

IB1 = IB2 = -100mA

tOFF

370

Notes:

9. Measured under pulsed conditions. Pulse width

≤ 300μs. Duty cycle ≤ 2%.

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